| PART |
Description |
Maker |
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| PEB2465H |
Voice Access - SICOFI4 (IOM) Single Chip CMO
|
Infineon
|
| UPD6500X |
3-Micron CMOS Gate Arrays
|
NEC Electronics
|
| CMOS-6 CMOS-6A CMOS-6V CMOS-6X |
1.0-MICRON CMOS GATE ARRAYS 1.0微米CMOS门阵
|
NEC, Corp.
NEC[NEC]
|
| CB-C8 |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC Corp.
|
| UPD966XX UPD936XX UPD946XX UPD956XX CB-C8 |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC[NEC]
|
| ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.
|
Atmel
|
| 256 600 120 ATL25_432 ATL25 ATL25_976 ATL25_100 AT |
ASIC 专用集成电路
From old datasheet system
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| N25Q256A11ESF40 N25Q256A11ESF40F N25Q256A11E1240 |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| JS28F256P30TFA |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
| N25Q128A13ESE40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| MRF9060MBR1 MRF9060MR1 |
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
Motorola, Inc.
|
